Optical and electronic functionality arising from controlled defect formation in nanoscale complex oxide lateral epitaxy-Reference-Cited by-同舟云学术

Optical and electronic functionality arising from controlled defect formation in nanoscale complex oxide lateral epitaxy

Published:2024-07-26 Issue:30 Volume:10 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Liu Rui¹^ORCID,Janicki Tesia D.²^ORCID,Marks Samuel D.¹^ORCID,Gyan Deepankar Sri¹^ORCID,Zuo Peng¹^ORCID,Savage Donald E.¹^ORCID,Zhou Tao³^ORCID,Cai Zhonghou⁴^ORCID,Holt Martin³^ORCID,Butun Serkan⁵^ORCID,Lu Shaoning⁵,Basit Nasir⁵,Hu Xiaobing⁶⁷^ORCID,Abbott Tirzah⁶^ORCID,Kabat Nathaniel⁶,Li Wei⁸^ORCID,Li Qian⁸^ORCID,Kelley Kyle P.⁹^ORCID,Vasudevan Rama K.⁹^ORCID,Schmidt J. R.²^ORCID,Babcock Susan E.¹,Evans Paul G.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.

2. Department of Chemistry, University of Wisconsin-Madison, Madison, WI 53706, USA.

3. Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA.

4. Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA.

5. Northwestern University Micro/Nano Fabrication Facility, Northwestern University, Evanston, IL 60208, USA.

6. Northwestern University Atomic and Nanoscale Characterization Experimental Center, Northwestern University, Evanston, IL 60208, USA.

7. Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA.

8. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.

9. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.

Abstract

Epitaxial crystallization of complex oxides provides the means to create materials with precisely selected composition, strain, and orientation, thereby controlling their functionalities. Extending this control to nanoscale three-dimensional geometries can be accomplished via a three-dimensional analog of oxide solid-phase epitaxy, lateral epitaxial crystallization. The orientation of crystals within laterally crystallized SrTiO 3 systematically changes from the orientation of the SrTiO 3 substrate. This evolution occurs as a function of lateral crystallization distance, with a rate of approximately 50° μm −1 . The mechanism of the rotation is consistent with a steady-state stress of tens of megapascal over a 100–nanometer scale region near the moving amorphous/crystalline interface arising from the amorphous-crystalline density difference. Second harmonic generation and piezoelectric force microscopy reveal that the laterally crystallized SrTiO 3 is noncentrosymmetric and develops a switchable piezoelectric response at room temperature, illustrating the potential to use lateral crystallization to control the functionality of complex oxides.

Publisher

American Association for the Advancement of Science (AAAS)

Link

https://www.science.org/doi/pdf/10.1126/sciadv.adk5509

Reference64 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Superconducting Interfaces Between Insulating Oxides

3. Self‐Formed, Conducting LaAlO 3 /SrTiO 3 Micro‐Membranes

4. Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties

5. Thermoelectric properties of Al-doped ZnO as a promising oxide material for high-temperature thermoelectric conversion

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