Origin of extra diffraction spots for high crystalline alpha-Ga2O3-Reference-Cited by-同舟云学术

Origin of extra diffraction spots for high crystalline alpha-Ga2O3

Published:2023-02-01 Issue:2 Volume:13 Page:
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:

Author:

Lee Yong-Hee¹^ORCID,Yang Duyoung¹^ORCID,Gil Byeongjun¹^ORCID,Sheen Mi-Hyang¹^ORCID,Yoon Euijoon¹^ORCID,Park Yongjo²^ORCID,Jang Ho-Won¹²^ORCID,Yoon Sangmoon³^ORCID,Kim Miyoung¹^ORCID,Kim Young-Woon¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, and Research Institute of Advanced Materials, Seoul National University 1 , Seoul 08826, Republic of Korea

2. Advanced Institute of Convergence Technology, Seoul National University 2 , Suwon 16229, Republic of Korea

3. Department of Physics, Gachon University 3 , Seougnam Gyeonggi-do 13120, Republic of Korea

Abstract

This work has investigated the microstructure characteristics of high-quality alpha-Ga2O3 thin film grown on the Al2O3 single crystal substrate membrane. Hetero-epitaxial alpha Ga2O3 crystals reveal the formation of a three-fold symmetry at the initial stage of the growth by the oxygen template provided by the Al2O3. Inversion domains are found, and they have a 180° inverted configuration from the surroundings. These IDs lead to extra diffraction spots when observed along [110] and [010].

Funder

National Research Foundation of Korea

Samsung

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0136783/16756766/025148_1_online.pdf

Reference22 articles.

1. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

2. Epitaxial Growth of GaN on (1 0 0) β-Ga2O3Substrates by Metalorganic Vapor Phase Epitaxy

3. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors

4. Biomineralization of Uniform Gallium Oxide Rods with Cellular Compatibility

5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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