Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal boules-Reference-Cited by-同舟云学术

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Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal boules

Published:2015-12 Issue: Volume:431 Page:24-31
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yamaguchi Tomoki,Ohtomo Kohei,Sato Shunsuke,Ohtani Noboru,Katsuno Masakazu,Fujimoto Tatsuo,Sato Shinya,Tsuge Hiroshi,Yano Takayuki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

2. Polytype stability and defects in differently doped bulk SiC

3. Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions

4. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC

5. Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

2. Distribution of the electrical resistivity of a n-type 4H-SiC crystal;Journal of Crystal Growth;2024-09

3. Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals;Materials Science in Semiconductor Processing;2024-06

4. Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds;Journal of Crystal Growth;2024-05

5. Experimental and simulation studies of surface segregation-limited nitrogen incorporation at the growth front of physical vapor transport-grown 4H-SiC crystals;Journal of Applied Physics;2023-07-26

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