Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals
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Published:2024-06
Issue:
Volume:176
Page:108266
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Inoue Yuta,
Tochizaki Wataru,
Iwai Toshitatsu,
Tanabe Kazuyoshi,
Ohtani NoboruORCID
Cited by
2 articles.
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