Nature of electrically detected magnetic resonance in highly nitrogen-doped 6H -SiC single crystals

Author:

Holiatkina M.1,Solodovnyk A.234ORCID,Laguta O.34ORCID,Neugebauer P.34,Kalabukhova E.5ORCID,Savchenko D.16ORCID

Affiliation:

1. National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute,”

2. Pennsylvania State University

3. Central European Institute of Technology

4. Brno University of Technology

5. V. E. Lashkaryov Institute of Semiconductor Physics

6. Technical Center NAS of Ukraine

Abstract

This work focuses on unraveling electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) properties of n-type 6H silicon carbide (SiC) single crystals with high concentrations of uncompensated nitrogen (N) donors, which is essential for fundamental understanding of spin-related phenomena, developing spin-based devices, optimizing materials and devices, and advancing research in quantum information and spintronics. Utilizing low-temperature multifrequency EPR spectroscopy (9.4–395.12 GHz), we identified two intense signals labeled as S line and S1 line in the 6H-SiC crystals with NDNA8×1018 and 4×1019cm3. In addition, in 6H-SiC crystals with NDNA8×1018cm3, a low-intensity triplet from N donors substituting the quasicubic “k2” nonequivalent position (Nk2) was observed. The S line [g=2.0029(2),g=2.0038(2)] was assigned to the exchange interaction of conduction electrons and Nk2, while the S1 line [g=2.0030(2),g=2.0040(2)] is caused by the exchange spin coupling of localized N donors at the “k1” and “k2” positions. The S1 line was observed in high-frequency EDMR spectra of 6H-SiC with NDNA8×1018cm3, and its emergence was explained by an enhancement of the hopping conductivity due to the EPR-induced temperature increase mechanism. No EDMR spectra were found to occur in the 6H-SiC crystals with NDNA4×1019cm3, which is close to the critical donor concentration value for a semiconductor-metal transition. Thus it can be concluded that this N donor concentration is too high for the appearance of spin-dependent scattering and too low for the emergence of EPR-induced hopping mechanisms in 6H-SiC. Published by the American Physical Society 2024

Funder

IEEE Foundation

Grantová Agentura České Republiky

Publisher

American Physical Society (APS)

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