Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC-Reference-Cited by-同舟云学术

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Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC

Published:2012-04-23 Issue:17 Volume:100 Page:172105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang H.,Wu F.,Byrappa S.,Sun S.,Raghothamachar B.,Dudley M.,Sanchez E. K.,Hansen D.,Drachev R.,Mueller S. G.,Loboda M. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4704679

Reference8 articles.

1. Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

2. Multiplication Processes for Slow Moving Dislocations

3. Three‐Dimensional X‐Ray Topographic Studies of Internal Dislocation Sources in Silicon

4. Dislocation sources and interactions in silicon

5. Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers

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1. The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology;Diamond and Related Materials;2023-06

2. Dislocations in 4H silicon carbide;Journal of Physics D: Applied Physics;2022-09-23

3. Investigation on dislocation and deflection morphology of PVT-grown on-axis 4H-SiC crystals;Journal of Physics D: Applied Physics;2022-09-15

4. Advances in 200 mm 4H SiC Wafer Development and Production;Materials Science Forum;2022-05-31

5. Measurement of Dislocation Density in SiC Wafers Using Production XRT;Materials Science Forum;2022-05-31

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