Dislocation sources and interactions in silicon-Reference-Cited by-同舟云学术

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Dislocation sources and interactions in silicon

Published:1970-10-16 Issue:2 Volume:3 Page:431-445
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Miltat J. E. A.,Bowen D. K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Dislocation Helices in Molybdenum

2. Dislocation Helices in Molybdenum

3. Studium von Einzelversetzungen in nahezu idealen Kristallen mit einer R�ntgenmethode

4. Die Erzeugung und Bewegung einzelner Versetzungen in Germaniumkristallen

5. in: Dislocation Dynamics, Eds. , and , McGraw-Hill Publ. Co., New York 1968 (p. 313).

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1. Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers;Journal of Electronic Materials;2017-11-06

2. Investigation of Penetration Depth and Defect Image Contrast Formation in Grazing Incidence X-ray Topography of 4H-SiC Wafers;ECS Transactions;2016-08-23

3. Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC;Applied Physics Letters;2012-04-23

4. Synchrotron Topography Studies of Growth and Deformation-Induced Dislocations in 4H-SiC;MRS Proceedings;2012

5. Dedication;Dynamical Theory of X-Ray Diffraction;2003-11-06

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