Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers-Reference-Cited by-同舟云学术

Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers

Published:2017-11-06 Issue:2 Volume:47 Page:1218-1222
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Yang Yu^ORCID,Guo Jianqiu,Goue Ouloide Yannick,Kim Jun Gyu,Raghothamachar Balaji,Dudley Michael,Chung Gill,Sanchez Edward,Manning Ian

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s11664-017-5863-4/fulltext.html

Reference7 articles.

1. G.S. Muller, E.K. Sanchez, D.M. Hansen, R.D. Drachev, G. Chung, B. Thomas, J. Zhang, M.J. Loboda, M. Dudley, H. Wang, F. Wu, S. Byrappa, B. Raghothamachar, and G. Choi, J. Cryst. Growth 352, 39 (2012).

2. M. Dudley, S. Byrappa, H. Wang, and F. Wu, Mater. Sci. Forum 65, 353 (2009).

3. H. Wang, M. Dudley, F. Wu, Y. Yang, B. Raghothamachar, J. Zhang, G. Chung, B. Thomas, E.K. Sanchez, S.G. Mueller, D. Hansen, and M.J. Loboda, J. Electron. Mater. 44, 1268 (2015).

4. V. Sarkar. Defect Characterization and Stress Analysis by White Beam Synchrotron X-Ray Topography in Single Crystal Semiconducting Materials. Dissertation, State University of New York at Stony Brook: ProQuest/UMI, 2011 (Publication No. AAT 3498206).

5. A. Authier, Adv. X-Ray Anal. 10, 9 (1967).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals;Materials Science and Engineering: B;2021-09

2. X-Ray Diffraction Topography Methods (Review);Physics of the Solid State;2021-02

3. Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography;Journal of Crystal Growth;2020-03