Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties-Reference-Cited by-同舟云学术

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Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

Published:2015-09 Issue: Volume:425 Page:43-48
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Karow Matthias M.,Faleev Nikolai N.,Smith David J.,Honsberg Christiana B.

Funder

National Science Foundation

Office of Energy Efficiency and Renewable Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Growth of low-defect density In[sub 0.25]Ga[sub 0.75]As on GaAs by molecular beam epitaxy

2. Role of substrate threading dislocation density in relaxation of highly strained InGaAs/GaAs quantum well structures

3. Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates

4. Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs

5. Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures

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1. Strain related degradation of highly tensile-strained multi-quantum well laser diodes;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

2. Generalized statistical dynamical theory of x-ray diffraction by imperfect multilayer crystal structures with defects;Physical Review B;2019-06-18

3. Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures;Journal of Crystal Growth;2018-12

4. Synthesizing InxGa1−xAs using molten In and GaAs by the sessile drop method at 400–600 °C;AIP Advances;2017-06

5. Carrier localization effects in GaAs1−xSbx/GaAs heterostructures;Journal of Applied Physics;2016-11-11

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