Growth of low-defect density In[sub 0.25]Ga[sub 0.75]As on GaAs by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of low-defect density In[sub 0.25]Ga[sub 0.75]As on GaAs by molecular beam epitaxy

Published:2000 Issue:6 Volume:18 Page:2611
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Pickrell G. W.,Chang K. L.,Epple J. H.,Cheng K. Y.,Hsieh K. C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties;Journal of Crystal Growth;2015-09

2. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I—High-resolution x-ray diffraction and x-ray topography;Journal of Crystal Growth;2013-02

3. Strain and crystal defects in thin AlN/GaN structures on (0001) SiC;Journal of Applied Physics;2010-06

4. High performance III/V RTD and PIN diode on a silicon (001) substrate;Applied Physics A;2007-03-09

5. Strong 1.3–1.6μm light emission from metamorphic InGaAs quantum wells on GaAs;Applied Physics Letters;2005-04-25

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