Strain and crystal defects in thin AlN/GaN structures on (0001) SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3437632
Reference32 articles.
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3. Investigation and optimization of AlN nucleation layers grown on 4H-SiC by MOCVD;Materials Today: Proceedings;2021
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