Strain related degradation of highly tensile-strained multi-quantum well laser diodes-Reference-Cited by-同舟云学术

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Strain related degradation of highly tensile-strained multi-quantum well laser diodes

Published:2023-02-07 Issue: Volume: Page:
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Container-title:2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Chen Bingqi¹,Cao Chentao¹,Che Xianghui¹,Fang Yulong¹

Affiliation:

1. 13th Institute of China Electronics Technology Group Corporation,Shijiazhuang City,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10070854/10070925/10071021.pdf?arnumber=10071021

Reference3 articles.

1. Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

2. MOVPE growth of AlGaInAs–InP highly tensile-strained MQWs for 1.3μm low-threshold lasers

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