Carrier localization effects in GaAs1−xSbx/GaAs heterostructures
Author:
Affiliation:
1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281, USA
Funder
National Science Foundation (NSF)
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4967755
Reference35 articles.
1. GaAsSb: A novel material for 1.3 [micro sign]m VCSELs
2. Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs
3. GaAsSb/GaAs band alignment evaluation for long-wave photonic applications
4. 2.6 μm InGaAs photodiodes
5. Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures
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