Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference36 articles.
1. Recent progress of GaN power devices for automotive applications
2. The 2018 GaN power electronics roadmap
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4. Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy
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1. Morphology evolution of homoepitaxial growth of aluminum nitride by hydride vapor phase epitaxy;Journal of Crystal Growth;2024-02
2. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate;Journal of Crystal Growth;2024-02
3. Morphology Evolution of Homoepitaxial Growth of Aluminum Nitride by Hydride Vapor Phase Epitaxy;2023
4. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy;Journal of Applied Physics;2022-10-14
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