Role of buried cracks in mitigating strain in crack free GaN grown on Si (111) employing AlN interlayer schemes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. The origin of stress reduction by low-temperature AlN interlayers
2. Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN
3. Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
4. Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
5. Growth of blue GaN LED structures on 150-mm Si(111)
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1. Substrates with Diamond Heat Sink for Epitaxial GaN Growth;Technical Physics Letters;2021-12-14
2. Normally-off AlGaN/GaN high electron mobility transistors on Si substrate with selective barrier regrowth in ohmic regions;Semiconductor Science and Technology;2021-03-26
3. In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications;Thin Solid Films;2020-08
4. On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate;Crystals;2017-05-12
5. Mechanisms of the micro-crack generation in an ultra-thin AlN/GaN superlattice structure grown on Si(110) substrates by metalorganic chemical vapor deposition;Journal of Applied Physics;2015-09-28
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