Normally-off AlGaN/GaN high electron mobility transistors on Si substrate with selective barrier regrowth in ohmic regions
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/abecab/pdf
Reference17 articles.
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3. GaN power switches on the rise: demonstrated benefits and unrealized potentials;Chu;Appl. Phys. Lett.,2020
4. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures;Ambacher;J. Appl. Phys.,2000
5. Recessed gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronic applications;Saito;IEEE Trans. Electron Devices,2006
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