Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Author:
Funder
Agence Nationale de la Recherche
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Investigations of 600-V GaN HEMT and GaN diode for power converter applications;Mitova;IEEE Trans. Power Electron.,2014
2. A 120-W boost converter operation using a high-voltage GaN-HEMT;Saito;IEEE Electron Device Lett.,2008
3. Power performance at 40 GHz of AlGaN/GaN high-electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate;Altuntas;IEEE Electron Device Lett.,2015
4. A dual-mode driver IC with monolithic negative drive-voltage capability and digital current-mode controller for depletion-mode GaN HEMT;Wen;IEEE Trans. Power Electron.,2017
5. 18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma ion implantation;Feng;IEEE Electron Device Lett.,2010
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