Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate-Reference-Cited by-同舟云学术

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

Published:2015-04 Issue:4 Volume:36 Page:303-305
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Altuntas Philippe,Lecourt Francois,Cutivet Adrien,Defrance Nicolas,Okada Etienne,Lesecq Marie,Rennesson Stephanie,Agboton Alain,Cordier Yvon,Hoel Virginie,De Jaeger Jean-Claude

Funder

Research National Agency within the frame of STARGaN Project

RENATECH Technological Network

Cluster of Excellence GANEX

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7064687/07042823.pdf?arnumber=7042823

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