Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size
Author:
Affiliation:
1. NANOLAB USAL Universidad de Salamanca,Applied Physics Department,Salamanca,Spain
2. Univ. Grenoble Alpes,CNRS, Grenoble INP, IMEP-LAHC,Grenoble,France
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10321701/10321765/10321787.pdf?arnumber=10321787
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2. Nonlinear Analysis of Nonresonant THz Response of MOSFET and Implementation of a High-Responsivity Cross-Coupled THz Detector
3. An Accurate Empirical Model Based on Volterra Series for FET Power Detectors
4. Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate
5. A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I–V Curve and S-Parameters
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