Novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion-Reference-Cited by-同舟云学术

Novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion

Published:2023 Issue:20 Volume:25 Page:3108-3115
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Xing Zhiheng¹²,Sun Peiye¹²,Wu Nengtao³²,Li Shanjie³²,Luo Ling¹,Zeng Fanyi¹,Li Guoqiang¹³²^ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641, China

2. Guangdong Choicore Optoelectronics Co., Ltd., Heyuan 517003, China

3. School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, China

Abstract

A novel E-mode GaN high-electron-mobility field-effect transistor with a superlattice barrier doped with Mg by thermal diffusion. This strategy can provide new ideas for the commercialisation of E-mode devices.

Funder

National Key Research and Development Program of China

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00132F

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