Funder
National Natural Science Foundation of China
Ministry of Science and Technology of the People's Republic of China
Impact Fund
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
34 articles.
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1. An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics;ECS Journal of Solid State Science and Technology;2024-01-01
2. Simulation Study of p-GaN Gate HEMTs With Dielectric Interlayer;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
3. Simulation Study of p-GaN HEMT with Gate Floating Metal Rings;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
4. Electroluminescence and Gate Carrier Dynamics in a Schottky-Type p-GaN Gate Double-Channel GaN HEMT;IEEE Electron Device Letters;2023-10
5. High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer;IEEE Electron Device Letters;2023-09