On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate
Author:
Publisher
MDPI AG
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2073-4352/7/5/134/pdf
Reference21 articles.
1. A Survey of Wide Bandgap Power Semiconductor Devices
2. Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool
3. 1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate
4. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
5. Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy
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3. High-quality AlN growth: a detailed study on ammonia flow;Journal of Materials Science: Materials in Electronics;2023-01-25
4. The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application;Materials;2022-03-10
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