Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
2. Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
3. AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications
4. In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy
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1. Transfer of III-nitride epitaxial layers onto pre-patterned silicon substrates for the simple fabrication of free-standing MEMS;Applied Physics Letters;2024-03-04
2. PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management;Power Electronic Devices and Components;2023-03
3. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD;Semiconductor Science and Technology;2023-02-22
4. Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate;Semiconductors;2019-08
5. Structural, optical and morphological properties of hybrid heterostructures on the basis of GaN grown on compliant substrate por-Si(111);Applied Surface Science;2019-05
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