The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes
Author:
Funder
National Science Council
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
2. High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers
3. Pinholelike defects in multistack 1.3μm InAs quantum dot laser
4. 1.55μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
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2. Quantitative description of carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures;Journal of Physics D: Applied Physics;2021-09-28
3. High-efficiency deep-red quantum-dot light-emitting diodes with type-II CdSe/CdTe core/shell quantum dots as emissive layers;Journal of Materials Chemistry C;2016
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