Molecular beam epitaxial growth of GaSb quantum dots on (0 0 1) GaAs substrate with InGaAs insertion layer-Reference-Cited by-同舟云学术

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Molecular beam epitaxial growth of GaSb quantum dots on (0 0 1) GaAs substrate with InGaAs insertion layer

Published:2015-09 Issue: Volume:425 Page:291-294
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Khoklang Kamonchanok,Kiravittaya Suwit,Kunrugsa Maetee,Prongjit Patchareewan,Thainoi Supachok,Ratanathammaphan Somchai,Panyakeow Somsak

Funder

Asian Office of Aerospace Research and Development

Thailand Research Fund

Office of High Education Commission

Chulalongkorn University

Ratchadaphiseksomphot Endowment Fund of Chulalongkorn University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. 1.3μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy;Ustinov;J. Cryst. Growth,2001

2. An electrically injected InAs/GaAs quantum-dot photonic crystal microcavity light-emitting diode;Sabarinathan;Appl. Phys. Lett.,2002

3. High-sensitivity modulation-doped quantum dot infrared photodetectors;Hirakawa;Microelectron. Eng.,2002

4. High-efficiency InAs/GaAs quantum dot solar cells by metalorganic chemical vapor deposition;Tanabe;Appl. Phys. Lett.,2012

5. The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory;Hayne;J. Phys. D: Appl. Phys.,2013

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of hybrid InSb and GaSb quantum nanostructures;Microelectronic Engineering;2021-01

2. Influence of MBE growth parameters on GaSb/GaAs quantum dot morphology;Physica E: Low-dimensional Systems and Nanostructures;2020-04

3. Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots;Current Applied Physics;2019-05

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