Quantitative description of carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6463/ac26f7/pdf
Reference46 articles.
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2. Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion;Hwang;J. Appl. Phys.,2012
3. Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells;Wagener;Sol. Energy Mater. Sol. Cells,2019
4. Radiative recombination in type-II GaSb/GaAs quantum dots;Hatami;Appl. Phys. Lett.,1995
5. Electronic properties of type-II GaAs1−x Sb x /GaAs quantum rings for applications in intermediate band solar cells;Arkani;Opt. Quantum Electron.,2020
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optical absorption spectra of GaSb/GaAs quantum-ring-with-dot structures and their potential for intermediate band solar cells;Journal of Physics D: Applied Physics;2023-07-28
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