1.55μm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2898895
Reference21 articles.
1. GaAs-based long-wavelength lasers
2. Low-coherence interferometric measurements of the dispersion of multiple fiber Bragg gratings
3. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
4. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
5. Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
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4. Optical Quality of InAs/InP Quantum Dots on Distributed Bragg Reflector Emitting at 3rd Telecom Window Grown by Molecular Beam Epitaxy;Materials;2021-10-21
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