Growth and characterisation of semi-polar InGaN/GaN MQW structures-Reference-Cited by-同舟云学术

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Growth and characterisation of semi-polar InGaN/GaN MQW structures

Published:2007-03 Issue:1 Volume:300 Page:155-159
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kappers M.J.,Hollander J.L.,McAleese C.,Johnston C.F.,Broom R.F.,Barnard J.S.,Vickers M.E.,Humphreys C.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

2. Improved quantum efficiency in nonpolar (112̄0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth

3. Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes

4. Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

5. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

Cited by 69 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar (112¯2) substrate using cathodoluminescence in transmission electron microscopy;Journal of Vacuum Science & Technology A;2024-02-01

2. Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 112¯2 InGaN/GaN Multi-Quantum Wells;Nanomaterials;2023-06-27

3. Long wavelength red to green emissions from {11 2¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer;Japanese Journal of Applied Physics;2022-11-14

4. Crystalline orientation and anisotropy of semi-polar GaN films grown on m-sapphire substrate by hydride vapor phase epitaxy;Journal of Crystal Growth;2022-10

5. Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells;Crystals;2022-09-27

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