Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth-Reference-Cited by-同舟云学术

Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

Published:2005-04-11 Issue:15 Volume:86 Page:151918
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Onuma T.,Chakraborty A.,Haskell B. A.,Keller S.,DenBaars S. P.,Speck J. S.,Nakamura S.,Mishra U. K.,Sota T.,Chichibu S. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1900947

Reference22 articles.

1. K. Horino, A. Kuramata, K. Domen, R. Soejima, and T. Tanahashi, Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes (Ohmusha, Ltd., Tokyo, Japan 1996), p. 530.

2. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

3. NonpolarInxGa1−xN/GaN(11¯00)multiple quantum wells grown onγ−LiAlO2(100)by plasma-assisted molecular-beam epitaxy

4. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

5. GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

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