Molecular beam epitaxy growth of GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
2. Towards high performance GaInAsN∕GaAsN laser diodes in 1.5 μm range
3. Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
4. InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy
5. Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 [micro sign]m
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