InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379787
Reference22 articles.
1. High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
2. Fabrication of In/sub 0.25/Ga/sub 0.75/As/InGaAsP strained SQW lasers on In/sub 0.05/Ga/sub 0.95/As ternary substrate
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
5. Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode
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