Evolution of threading dislocations in MOCVD-grown GaN films on (111) Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers
2. High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer
3. Effects of step-graded AlxGa1−xN interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition
4. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
5. Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers
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3. Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface;Semiconductor Science and Technology;2020-11-25
4. Temperature dependent electrical properties of AlN/Si heterojunction;Journal of Applied Physics;2018-11-28
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