Heteroepitaxy of Highly Oriented GaN Films on Non-Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum-Induced Crystallization-Reference-Cited by-同舟云学术

Heteroepitaxy of Highly Oriented GaN Films on Non-Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum-Induced Crystallization

Author:

Hainey Mel F.¹^ORCID,Al Balushi Zakaria Y.¹^ORCID,Wang Ke²,Martin Nathan C.¹,Bansal Anushka¹,Chubarov Mikhail¹,Redwing Joan M.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Materials Research Institute Penn State University; University Park PA 16802 USA

2. Materials Characterization Laboratory Materials Research Institute Penn State University; University Park PA 16802 USA

Funder

Alfred P. Sloan Foundation

National Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference23 articles.

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