Heteroepitaxial Growth of GaN on Unconventional Templates and Layer-Transfer Techniques for Large-Area, Flexible/Stretchable Light-Emitting Diodes-Reference-Cited by-同舟云学术

Heteroepitaxial Growth of GaN on Unconventional Templates and Layer-Transfer Techniques for Large-Area, Flexible/Stretchable Light-Emitting Diodes

Published:2015-12-20 Issue:4 Volume:4 Page:505-521
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Choi Jun Hee¹,Kim Jinwoo²,Yoo Hyobin³,Liu Jinyun²,Kim Sunil¹,Baik Chan-Wook¹,Cho Chae-Ryong⁴,Kang Jin Gu²,Kim Miyoung³,Braun P. V.²,Hwang Sungwoo¹,Jung Tae-Sung¹

Affiliation:

1. Samsung Advanced Institute of Technology; Samsung Electronics; Suwon 443-803 South Korea

2. Department of Materials Science and Engineering; Frederick Seitz Materials Research Laboratory; University of Illinois at Urbana-Champaign; Urbana Illinois 61801 USA

3. Department of Materials Science and Engineering; Seoul National University; Seoul 151-744 South Korea

4. College of Nanoscience and Nanotechnology; Pusan National University; Busan 609-735 South Korea

Funder

Korea government (MSIP)

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference111 articles.

1. Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes

2. Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

3. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates

4. Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

5. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

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