Temperature dependent electrical properties of AlN/Si heterojunction
Author:
Affiliation:
1. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
2. Faculty of Science and Technology, ICFAI University, Tripura 799210, India
3. Central Research Laboratory, Bharat Electronics, Bangalore 560013, India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5036932
Reference63 articles.
1. III–nitrides: Growth, characterization, and properties
2. The electrical properties of MIS capacitors with ALN gate dielectrics
3. Piezoelectric, dielectric, and interfacial properties of aluminum nitride films
4. The thermal stability of AlN
5. Thermal Conductivity of AlN and SiC Thin Films
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