Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

Author:

Kumakura K.,Makimoto T.,Kobayashi N.,Hashizume T.,Fukui T.,Hasegawa H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

2. High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

3. Activation Energy and Electrical Activity of Mg in Mg-Doped InxGa1-xN (x<0.2)

4. K. Kumakura, M. Hiroki, T. Makimoto, in: Proceedings of the 64th Fall Meeting of the Japanese Society of Applied Physics 30a-F-7, Fukuoka, 2003 (in Japanese)

5. K. Kumakura, M. Hiroki, T. Makimoto, in: Proceedings of the 2004 International Workshop of Nitride Semiconductors, P5.1, Pittsburgh, USA, July 2004

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