Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds-Reference-Cited by-同舟云学术

Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds

Published:2022-11-18 Issue:21 Volume:129 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Sauty Mylène^ORCID,Lopes Nicolas M. S.^ORCID,Banon Jean-Philippe^ORCID,Lassailly Yves^ORCID,Martinelli Lucio^ORCID,Alhassan Abdullah,Chow Yi Chao,Nakamura Shuji,Speck James S.,Weisbuch Claude,Peretti Jacques^ORCID

Funder

Agence Nationale de la Recherche

Simons Foundation

National Science Foundation

U.S. Department of Energy

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.129.216602/fulltext

Reference44 articles.

1. Electronic Properties of Doped Semiconductors

2. Alloying induced degradation of the absorption edge of InAsxSb1−x

3. Dynamics of intrinsic and nitrogen-induced exciton emission in indirect-gapGa1−xAlxAs

4. Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD

5. Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

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