Detection of hot electrons originating from an upper valley at <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mo>∼</mml:mo><mml:mn>1.7</mml:mn><mml:mspace width="0.16em" /><mml:mi>eV</mml:mi></mml:mrow></mml:math> above the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi mathvariant="normal">Γ</mml:mi></mml:math> valley in wurtzite GaN using electron emission spectroscopy-Reference-Cited by-同舟云学术

Detection of hot electrons originating from an upper valley at ∼1.7eV above the Γ valley in wurtzite GaN using electron emission spectroscopy

Published:2023-01-06 Issue:3 Volume:107 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ho Wan Ying^ORCID,Alhassan Abdullah I.,Lynsky Cheyenne,Chow Yi Chao^ORCID,Myers Daniel J.,DenBaars Steven P.^ORCID,Nakamura Shuji,Peretti Jacques^ORCID,Weisbuch Claude,Speck James S.

Funder

University of California, Santa Barbara

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Collaborative Research in Engineering, Science and Technology Centre

U.S. Department of Energy

Office of Energy Efficiency and Renewable Energy

Simons Foundation

National Science Foundation

Sandia National Laboratory

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.107.035303/fulltext

Reference42 articles.

1. Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

2. Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

3. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

4. Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap

5. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

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3. Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES);Applied Physics Letters;2023-05-22

4. Detection of hot electrons originating from an upper valley at ∼1.7eV above the Γ valley in wurtzite GaN using electron emission spectroscopy;Physical Review B;2023-01-06