Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Funder
U.S. Department of Energy (Department of Energy)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4916727
Reference27 articles.
1. High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers
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3. The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
4. The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells
5. Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction
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