The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures-Reference-Cited by-同舟云学术

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The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

Published:2014-09 Issue:9 Volume:105 Page:092106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Davies M. J.¹,Dawson P.¹,Massabuau F. C.-P.²,Oliver R. A.²,Kappers M. J.²,Humphreys C. J.²

Affiliation:

1. School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom

2. Department of Material Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

Funder

United Kingdom Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4894834

Reference26 articles.

1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

2. Electroluminescence efficiency of blue InGaN∕GaN quantum-well diodes with and without an n-InGaN electron reservoir layer

3. Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

4. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency

5. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

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1. Improved Modulation Bandwidth of c-Plane Micro-LED Arrays by Varying Si Doping in the Quantum Barrier;IEEE Transactions on Electron Devices;2024-03

2. Competition between built-in polarization and p–n junction field in III-nitride heterostructures;Journal of Applied Physics;2023-12-26

3. Broadband optical nonlinearity and all-optical switching features in low-defect GaN;Optics Express;2023-09-12

4. Radiative emission mechanism analysis of green InGaN/GaN light-emitting diodes with the Si-doped graded short-period superlattice;Journal of Luminescence;2023-01

5. Platinum-silicon doped graphitic carbon nitride: A first principle calculation;Physica B: Condensed Matter;2022-02

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