Surfactant-related growth of InAs1−xSbx quantum structures on InP(001) by metalorganic vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Growth of self-assembled InAs and InAsxP1−x dots on InP by metalorganic vapour phase epitaxy
2. Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)
3. Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots
4. Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing
5. Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy
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1. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates;Journal of Crystal Growth;2021-02
2. Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy;Nanotechnology;2021-01-08
3. Room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate;AIP Advances;2018-12
4. Growth of InAsSb Quantum Dashes on InP (001) Substrate and Their Photoluminescence Properties;Journal of Nanoscience and Nanotechnology;2018-11-01
5. Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy;Nano Letters;2015-01-07
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