Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1350620
Reference16 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots
3. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
4. Structural and optical properties of vertically aligned InP quantum dots
5. Effects of Substrate Misorientation on the Formation and Characteristics of Self-Assembled InP/InGaP Quantum Dots
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1. Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition;Journal of Crystal Growth;2022-01
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3. Widely Tunable InAs/InP Quantum-Dot External-Cavity Laser with Bent-Waveguide Structure;Journal of Nanoscience and Nanotechnology;2018-11-01
4. Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 μm wavelength;International Journal of Modern Physics B;2016-08-18
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