Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120145
Reference20 articles.
1. MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures
2. Self-organized microstructure growth
3. In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode
4. Self-organized growth of quantum-dot structures
5. Photorefractive multiple quantum well device using quantum dots as trapping zones
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1. Formation of InAs1−xSbx quantum dots on vicinal InP(001) for 1.55-μm DFB laser applications;Journal of Crystal Growth;2008-06
2. Controlling shape of InAs1−xSbx quantum structures on InP for quantum dots with 1.55-μm emission;Journal of Crystal Growth;2007-01
3. Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001);Applied Physics Letters;2006-09-18
4. Surfactant-related growth of InAs1−xSbx quantum structures on InP(001) by metalorganic vapor-phase epitaxy;Journal of Crystal Growth;2006-05
5. Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate;Electronics Letters;2006
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