Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1715141
Reference21 articles.
1. Transport in Quantum Dots: Observation of Atomlike Properties
2. Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (001) InP substrate by MOCVD
3. InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effects
4. Using As/P exchange processes to modify InAs/InP quantum dots
5. Optical properties of submonolayer InAs/InP quantum dots on vicinal surfaces
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2. In-situ tuning of individual position-controlled nanowire quantum dots via laser-induced intermixing;Applied Physics Letters;2018-07-30
3. Precision tuning of InAs quantum dot emission wavelength by iterative laser annealing;Optics & Laser Technology;2018-07
4. InP Based Quantum Dots for Long Wavelength Emissions and Their Post-Growth Bandgap Tuning;J NANOELECTRON OPTOE;2015
5. Crystal defect-mediated band-gap engineering: a new strategy for tuning the optical properties of Ag2Se quantum dots toward enhanced hydrogen evolution performance;Journal of Materials Chemistry A;2015
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