Improvement of crystal quality of thick InGaAsN layers grown on InP substrates by adding antimony
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP
2. InGaAsPN-InP-based photodetectors for long wavelength (/spl lambda/>1.65 μm) applications
3. Gas source molecular beam epitaxy grown InGaAs(P)N-InP long-wavelength (/spl lambda/>1.65 μm) photodetectors using a solid arsenic source
4. InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy
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1. Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy;Journal of Crystal Growth;2018-02
2. Optical properties of InAsSbN single quantum wells grown on InP substrates for 2-μm-wavelength region;Journal of Crystal Growth;2013-09
3. Fabrication of In0.53Ga0.47AsN0.01/AlAs0.56Sb0.44 resonant tunnelling diodes grown on InP by molecular beam epitaxy;Electronics Letters;2012
4. InP-based InGaAsSbN quantum well laser diodes in the 2-μm wavelength region;Electronics and Communications in Japan;2011-04-25
5. Characterization of InGaAsSbN layers grown on InP by MBE;physica status solidi (c);2011-01-13
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