RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Growth of high‐quality hexagonal InN on 3C‐SiC (001) by molecular beam epitaxy
3. Low temperature epitaxial growth of 3C-SiC on (111) silicon substrates
4. Epitaxial growth of cubic SiC by hot filament CVD
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantitative study on the mechanisms underlying the phonon bottleneck effect in InN/InGaN multiple quantum wells;Applied Physics Letters;2020-03-09
2. Study the Mechanisms of Enhanced Phonon Bottleneck Effect for the Absorber of Hot Carrier Solar Cell in III-V Multiple Quantum Wells;IOP Conference Series: Materials Science and Engineering;2020-03-01
3. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE;Journal of Semiconductors;2015-08
4. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells;physica status solidi (a);2011-11-16
5. InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy;Applied Physics Letters;2011-02-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3