Epitaxial growth of cubic SiC by hot filament CVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Epitaxial growth and electric characteristics of cubic SiC on silicon
2. Low‐temperature growth of 3C‐SiC by the gas source molecular beam epitaxial method
3. LOW‐TEMPERATURE EPITAXY OF β‐SiC BY REACTIVE DEPOSITION
4. Low‐temperature 3C‐SiC heteroepitaxial film growth on Si by reactive‐ion‐beam deposition
5. Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition
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1. In situ doping of diamond coatings with silicon, aluminum and titanium through a modified laser-based CVD process;Diamond and Related Materials;2014-01
2. Atomic structure analysis of stacking faults and misfit dislocations at 3C-SiC/Si(0 0 1) interfaces by aberration-corrected transmission electron microscopy;Journal of Physics D: Applied Physics;2012-11-16
3. Atomic arrangement at the 3C-SiC/Si(001) interface revealed utilising aberration-corrected transmission electron microscope;Philosophical Magazine Letters;2011-09
4. Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C-SiC (001) substrates by molecular beam epitaxy;physica status solidi (c);2008-05
5. RF-MBE growth of InN/InGaN quantum well structures on 3C–SiC substrates;Journal of Crystal Growth;2007-04
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