Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells-Reference-Cited by-同舟云学术

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

Published:2011-11-16 Issue:1 Volume:209 Page:17-20
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Valdueza-Felip Sirona,Rigutti Lorenzo,Naranjo Fernando B.,Lacroix Bertrand,Fernández Susana,Ruterana Pierre,Julien François H.,González-Herráez Miguel,Monroy Eva

Funder

Spanish Government Projects

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201100188/fullpdf

Reference25 articles.

1. Temperature dependence of the fundamental band gap of InN

2. When group-III nitrides go infrared: New properties and perspectives

3. Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5μm

4. Femtosecond all-optical devices for ultrafast communication and signal processing

5. Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy

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1. Quantitative study on the mechanisms underlying the phonon bottleneck effect in InN/InGaN multiple quantum wells;Applied Physics Letters;2020-03-09

2. Study the Mechanisms of Enhanced Phonon Bottleneck Effect for the Absorber of Hot Carrier Solar Cell in III-V Multiple Quantum Wells;IOP Conference Series: Materials Science and Engineering;2020-03-01

3. Electronic properties of substitutional impurities in InGaN monolayer quantum wells;Applied Physics Letters;2015-05-11

4. Carrier localization in InN/InGaN multiple-quantum wells with high In-content;Applied Physics Letters;2012-08-06