Electronic properties of substitutional impurities in InGaN monolayer quantum wells
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
2. Department of Materials System Science, Yokohama City University, Yokohama 236-0027, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4919787
Reference29 articles.
1. Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN
2. Electronic structure of a single-layer InN quantum well in a GaN matrix
3. InGaN/GaN light emitting diodes activated in O/sub 2/ ambient
4. Performance of InGaN/GaN light-emitting diodes grown using NH3with oxygen-containing impurities
5. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
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