Carrier localization in InN/InGaN multiple-quantum wells with high In-content
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4742157
Reference20 articles.
1. When group-III nitrides go infrared: New properties and perspectives
2. Third order nonlinear susceptibility of InN at near band-gap wavelengths
3. High structural quality InN∕In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy
4. Fabrication and properties of coherent-structure In-polarity InN∕In0.7Ga0.3N multiquantum wells emitting at around 1.55μm
5. InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy
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1. Demonstration of 82% relaxed In0.18Ga0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy;Physica Scripta;2023-12-29
2. Quantum Spin Hall Effect in Two-Monolayer-Thick InN/InGaN Coupled Multiple Quantum Wells;Nanomaterials;2023-07-30
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4. Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 155µm;Optical Materials Express;2019-06-04
5. N-face $(000\bar{1})$ GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy;Applied Physics Express;2018-07-02
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